• A. Idda Laboratory of Physic and Semiconductor Devices, Physics Department, University of Béchar, P. O. Box 417, Béchar 08000, Algeria
  • L. Ayat Laboratory of Physic and Semiconductor Devices, University of Béchar, P. O. Box 417, Béchar 08000
  • O. Zaoui Laboratory of Physic and Semiconductor Devices, University of Béchar, P. O. Box 417, Béchar 08000




Amorphous silicon oxide; n-type layer; Wide band gap; high open circuit voltage (VOC).


In p-i-n a-Si:H solar cells, the different optical and electrical losses can be limited by using the wide bandgap a-Si:H alloys as doped layers. This study aims to explore the optoelectronic proprieties of hydrogenated amorphous silicon oxide (a-SiOx:H) for minimizing the optical and electrical losses in solar cell-based a-Si:H, in particular at n/i region. In this context, wxAMPS simulator is used to optimize the properties of the different layers of a-Si:H solar cell, especially n-type layer. The developed a-SiO:H has high photosensitivity and high band gap of 1.95eV, which contributed to attain remarkable fill factor (FF) and high open circuit voltage (VOC). As a result, an efficiency of 12.28 [%] was achieved. Even though, the short circuit courant Jsc is decreased, the high photosensitivity and wide band gap of a-SiOx:H n-layer offered a high VOC of 0.97V. In addition, the efficiency could be improved up to 12.3% by inserting a very thin non-doped a-SiOx:H at n/i interfaces, which offers better short circuit currents in the solar cell.


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How to Cite

IDDA, A.; AYAT, L.; ZAOUI, O. EFFECT OF WIDE-BANDGAP OF N-TYPE AMORPHOUS SILICON OXIDE (a-SiOX:H) LAYER ON THE PERFORMANCE OF a-Si:H SOLAR CELL. Journal of Fundamental and Applied Sciences, [S. l.], v. 12, n. 1S, p. 66–77, 2019. DOI: 10.4314/jfas.v12i1S.6. Disponível em: https://www.jfas.info/index.php/JFAS/article/view/638. Acesso em: 24 mar. 2023.