EFFECT OF WIDE-BANDGAP OF N-TYPE AMORPHOUS SILICON OXIDE (a-SiOX:H) LAYER ON THE PERFORMANCE OF a-Si:H SOLAR CELL
DOI:
https://doi.org/10.4314/jfas.v12i1S.6Keywords:
Amorphous silicon oxide; n-type layer; Wide band gap; high open circuit voltage (VOC).Abstract
In p-i-n a-Si:H solar cells, the different optical and electrical losses can be limited by using the wide bandgap a-Si:H alloys as doped layers. This study aims to explore the optoelectronic proprieties of hydrogenated amorphous silicon oxide (a-SiOx:H) for minimizing the optical and electrical losses in solar cell-based a-Si:H, in particular at n/i region. In this context, wxAMPS simulator is used to optimize the properties of the different layers of a-Si:H solar cell, especially n-type layer. The developed a-SiO:H has high photosensitivity and high band gap of 1.95eV, which contributed to attain remarkable fill factor (FF) and high open circuit voltage (VOC). As a result, an efficiency of 12.28 [%] was achieved. Even though, the short circuit courant Jsc is decreased, the high photosensitivity and wide band gap of a-SiOx:H n-layer offered a high VOC of 0.97V. In addition, the efficiency could be improved up to 12.3% by inserting a very thin non-doped a-SiOx:H at n/i interfaces, which offers better short circuit currents in the solar cell.
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References
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[12] Han M K, Sung P, Anderson W A. Determination of built-in-potential in NIP a-Si: H solar cells. IEEE Electron Device Letters, 1982, 3(5): 121, doi: 10.1109/EDL.1982.25506
[13] Ahmad G, Mandal S, Barua A K, et al. Band offset reduction at defect-rich p/i interface through a wide bandgap a-SiO: H buffer layer. IEEE Journal of Photovoltaics, 2017, 7(2): 414, doi: 10.1109/JPHOTOV.2016.2642644
[14] Hishid M, Takeyuki S, Akira T. Designing band offset of a-SiO: H solar cells for very high open-circuit voltage (1.06 V) by adjusting band gap of p–i–n junction. Japanese Journal of Applied Physics, 2014, 53(9): 092301, doi: https://iopscience.iop.org › JJAP.53.092301
[15] Ahmad G, Mandal S, Barua A K, et al. Reduction of hole injection barrier height at TCO/P interface using a-SiO: H interlayer. IEEE Journal of Photovoltaics, 2017, 8(1): 8, doi: 10.1109/JPHOTOV.2017.2771304
[16] Kim D Y, Guijt E, van Swaaij R, Zeman M. Hydrogenated amorphous silicon oxide (a-SiO x:H) single junction solar cell with 8.8% initial efficiency by reducing parasitic absorptions. Journal of Applied Physics, 2017, 121(13): 133103, doi: https://doi.org/10.1063/1.4979690
[17] Inthisang S, Janthong B, Sichanugrist P, et al. Fabrication of Novel Structure a-Si1-xOx:H/a-Si:H/μc-Si:H Triple-Junction Solar Cells. 26th European Photovoltaic Solar Energy Conference, 2011: 2392, doi: 10.4229/26thEUPVSEC2011-3CO.1.2
[2] Willardson R K. semiconductors and semimetals volume 21 hydrogenated amorphous silicon device applications, D. London: Academic Press, 1984. Doi: https://doi.org/10.1016/S0080-8784(08)62991-9
[3] Holinski S, Borchert D, Hohage S, et al. a-SiO:H thin films with increased light induced degradation stability for thin film silicon solar cells. 29th European PV Solar Energy Conference and Exhibition, 2014: 22
[4] Grundler T, Andreas L, Friedhelm F. N‐type hydrogenated amorphous silicon oxide containing a microcrystalline silicon phase as an intermediate reflector in silicon thin film solar cells. physica status solidi c, 2010, 10: 1085, doi: 10.1002/pssc.200982872
[5] Chen P W, Chen P L, Tsai C C. Development of wider bandgap n-type a-SiO x: H and μc-SiO x: H as both doped and intermediate reflecting layer for a-Si: H/a-Si 1-x Gex: H tandem solar cells. Electronic Materials Letters, 2016, 12(4): 445, doi: 10.1007/s13391-016-4004-1
[6] Limmanee A, Kittisontirak S, Inthisang S, et al. Advantages of N-type hydrogenated microcrystalline silicon oxide films for micromorph silicon solar cells. International Journal of Photoenergy, 2013, 2013: 513284, doi: http://dx.doi.org/10.1155/2013/513284
[7] Park J, Dao V A, Shin C, et al. A buffer-layer/a-SiOx: H (p) window-layer optimization for thin film amorphous silicon based solar cells. Thin Solid Films, 2013, 546: 331, doi: https://doi.org/10.1016/j.tsf.2013.06.064
[8] Alejandroh A, Hellmut F. Persistent photoconductance in a-Si: H/a-SiO:H multilayers. Philosophicmala Gazinbe, 1992, 65(1): 79, doi: https://doi.org/10.1080/13642819208223048
[9] Mandal S, Das G, Dhar S, et al. Development of a novel fluorinated n-nc-SiO: H material for solar cell application. Materials Chemistry and Physics, 2015, 157: 130, doi: https://doi.org/10.1016/j.matchemphys.2015.03.027
[10] Mandal S, Dhar S, Das G, et al. Development of optimized n-μc-Si: H/na-Si: H bilayer and its application for improving the performance of single junction a-Si solar cells. Solar Energy, 2016, 124: 278-286, doi: https://doi.org/10.1016/j.solener.2015.11.042
[11] Ruhi K, Bengü K. Built-in Potential Measurements in a-Si: H pin Solar Cells. Turkish Journal of Physics, 2001, 25(4): 375, doi: 2001TJPh...25..375K
[12] Han M K, Sung P, Anderson W A. Determination of built-in-potential in NIP a-Si: H solar cells. IEEE Electron Device Letters, 1982, 3(5): 121, doi: 10.1109/EDL.1982.25506
[13] Ahmad G, Mandal S, Barua A K, et al. Band offset reduction at defect-rich p/i interface through a wide bandgap a-SiO: H buffer layer. IEEE Journal of Photovoltaics, 2017, 7(2): 414, doi: 10.1109/JPHOTOV.2016.2642644
[14] Hishid M, Takeyuki S, Akira T. Designing band offset of a-SiO: H solar cells for very high open-circuit voltage (1.06 V) by adjusting band gap of p–i–n junction. Japanese Journal of Applied Physics, 2014, 53(9): 092301, doi: https://iopscience.iop.org › JJAP.53.092301
[15] Ahmad G, Mandal S, Barua A K, et al. Reduction of hole injection barrier height at TCO/P interface using a-SiO: H interlayer. IEEE Journal of Photovoltaics, 2017, 8(1): 8, doi: 10.1109/JPHOTOV.2017.2771304
[16] Kim D Y, Guijt E, van Swaaij R, Zeman M. Hydrogenated amorphous silicon oxide (a-SiO x:H) single junction solar cell with 8.8% initial efficiency by reducing parasitic absorptions. Journal of Applied Physics, 2017, 121(13): 133103, doi: https://doi.org/10.1063/1.4979690
[17] Inthisang S, Janthong B, Sichanugrist P, et al. Fabrication of Novel Structure a-Si1-xOx:H/a-Si:H/μc-Si:H Triple-Junction Solar Cells. 26th European Photovoltaic Solar Energy Conference, 2011: 2392, doi: 10.4229/26thEUPVSEC2011-3CO.1.2
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Published
2019-11-17
How to Cite
IDDA, A.; AYAT, L.; ZAOUI, O. EFFECT OF WIDE-BANDGAP OF N-TYPE AMORPHOUS SILICON OXIDE (a-SiOX:H) LAYER ON THE PERFORMANCE OF a-Si:H SOLAR CELL. Journal of Fundamental and Applied Sciences, [S. l.], v. 12, n. 1S, p. 66–77, 2019. DOI: 10.4314/jfas.v12i1S.6. Disponível em: https://www.jfas.info/index.php/JFAS/article/view/638. Acesso em: 24 mar. 2023.
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